Product Features
? VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V
? VDD = +2.6V ±0.1V, VDDQ = +2.6V ±0.1V (DDR400)
? Bidirectional data strobe (DQS) transmitted/ received with data, that is, source-synchronous data capture (x16 has two – one per byte)
? Internal, pipelined double-data-rate (DDR) architecture; two data accesses per clock cycle
? Differential clock inputs (CK and CK#)
? Commands entered on each positive CK edge
? DQS edge-aligned with data for READs; centeraligned with data for WRITEs
? DLL to align DQ and DQS transitions with CK
? Four internal banks for concurrent operation
? Data mask (DM) for masking write data (x16 has two – one per byte)
? Programmable burst lengths (BL): 2, 4, or 8
? Auto refresh
– 64ms, 8192-cycle(Commercial & Industrial)
– 16ms, 8192-cycle (Automotive)
? Self refresh (not available on AT devices)
? Longer-lead TSOP for improved reliability (OCPL)
? 2.5V I/O (SSTL_2-compatible)
? Concurrent auto precharge option supported
? tRAS lockout supported (tRAP = tRCD)
Specifications
| Attribute | Attribute value |
| ANSM-Part# | ANSM-MT46V16M16P-6TF |
| Category | Integrated Circuits (ICs) |
| Memory | |
| Memory | |
| Mfr | Micron Technology Inc. |
| Series | - |
| Package | Tray |
| Product Status | Obsolete |
| DigiKey Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR |
| Memory Size | 256Mbit |
| Memory Organization | 16M x 16 |
| Memory Interface | Parallel |
| Clock Frequency | 167 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 700 ps |
| Voltage - Supply | 2.3V ~ 2.7V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 66-TSSOP (0.400", 10.16mm Width) |
| Supplier Device Package | 66-TSOP |
| Base Product Number | MT46V16M16 |
Actual product photos
Product Data Book：
For more product information, please download the PDF
Payment&Transportation
Official Certificate&Certificate
Multiple product supply
Company office environment
Warehouse Real Shot
Standard packaging
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