Product Descriptions
NPN silicon microwave transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package.
The BFU590G is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.
Product Features
? Medium power, high linearity, high breakdown voltage RF transistor
? AEC-Q101 qualified
? Maximum stable gain 13 dB at 900 MHz
? PL(1dB) 21.5 dBm at 900 MHz
? 8.5 GHz fT silicon technology
Product Applications
? Automotive applications
? Broadband amplifiers
? Medium power amplifiers (500 mW at a frequency of 433 MHz or 866 MHz)
? Large signal amplifiers for ISM applications
Specifications
| Attribute | Attribute value |
| ANSM-Part# | ANSM-BFU590G |
| Category | Discrete Semiconductor Products |
| Transistors | |
| Bipolar (BJT) | |
| Bipolar RF Transistors | |
| Mfr | NXP USA Inc. |
| Series | - |
| Package | Tape & Reel (TR) |
| Cut Tape (CT) | |
| Digi-Reel? | |
| Product Status | Active |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| Frequency - Transition | 8.5GHz |
| Noise Figure (dB Typ @ f) | - |
| Gain | 8dB |
| Power - Max | 2W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 80mA, 8V |
| Current - Collector (Ic) (Max) | 200mA |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Supplier Device Package | SC-73 |
| Base Product Number | BFU590 |
Actual product photos
Product Data Book：
For more product information, please download the PDF
Payment&Transportation
Official Certificate&Certificate
Multiple product supply
Company office environment
Warehouse Real Shot
Standard packaging
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