| Part# | NCE30H11BK |
| Type： | high-voltage N-channel IGBT field-effect transistor |
| Manufactor | NCE |
| DC | NEW |
| Describe | TO252 |
| Supplier Device Packaging | REEL |
| Technology | Trench |
| Polarity | N |
| BVDSS(V) | 30 |
| ID(A) | 110 |
| VTH(V) | 1.6 |
| RDS(ON)@10VTyp(mΩ) | 2.7 |
| RDS(ON)@4.5VTyp(mΩ) | 3.9 |
| QG(nC) | 66.3 |
| PD(W) | 68 |
| PKG | / |
