Product Description
| Type | Description |
| PART# | SSM3J351R,LXGF |
| Ihs Manufacturer | TOSHIBA CORP |
| Factory Lead Time | 16 Weeks |
| Samacsys Manufacturer | Toshiba |
| Avalanche Energy Rating (Eas) | 8.9 mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 60 V |
| Drain Current-Max (ID) | 3.5 A |
| Drain-source On Resistance-Max | 0.184 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 50 pF |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 °C |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 1 W |
| Pulsed Drain Current-Max (IDM) | 14 A |
| Reference Standard | AEC-Q101 |
| Surface Mount | YES |
| Terminal Finish | Tin (Sn) |
| Terminal Form | FLAT |
| Terminal Position | DUAL |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Product Photos
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