| Part# | NCEP080N12D |
| Type： | High-voltage N-channel IGBT field-effect transistor |
| Manufactor | / |
| DC | NEW |
| Describe | TO-263 |
| Supplier Device Packaging | TUBE |
| Technology | SGT-II |
| Polarity | N |
| BVDSS(V) | 120 |
| ID(A) | 90 |
| VTH(V) | 3 |
| RDS(ON)@10VTyp(mΩ) | 7.5 |
| QG(nC) | 58 |
| PD(W) | 140 |
| PKG | / |
