| Part# | NCE65T2K4I |
| Type： | High-voltage N-channel IGBT field-effect transistor |
| Manufactor | NCE |
| DC | NEW |
| Describe | TO-251 |
| Supplier Device Packaging | TUBE |
| Technology | SJ-Ⅲ |
| Polarity | N |
| BVDSS(V) | 650 |
| ID(A) | 2 |
| VTH(V) | 3.5 |
| RDS(ON)@10VTyp(mΩ) | 2200 |
| PD(W) | 21 |
| PKG | / |
Hi,歡迎
+86 135 5637 6665
+852 2632 9637
6*12小時在線電話
