| Part# | NCEP11N10AK |
| Type： | high-voltage N-channel IGBT field-effect transistor |
| Manufactor | NCE |
| DC | NEW |
| Describe | TO252 |
| Supplier Device Packaging | REEL |
| Technology | SGT-II |
| Polarity | N |
| BVDSS(V) | 100 |
| ID(A) | 55 |
| VTH(V) | 1.7 |
| RDS(ON)@10VTyp(mΩ) | 11.5 |
| RDS(ON)@4.5VTyp(mΩ) | 14 |
| QG(nC) | 42 |
| PD(W) | 80 |
| PKG | / |
