| Part# | NCE60NP2012K |
| Type： | high-voltage N+P-channel IGBT field-effect transistor |
| Manufactor | NCE |
| DC | NEW |
| Describe | TO252 |
| Supplier Device Packaging | REEL |
| Technology | Trench |
| Polarity | N+P |
| BVDSS(V) | -60 |
| ID(A) | -12 |
| VTH(V) | -1.5 |
| RDS(ON)@10VTyp(mΩ) | 84 |
| RDS(ON)@4.5VTyp(mΩ) | 100 |
| QG(nC) | 37.6 |
| PD(W) | 50 |
| PKG | / |
