| Part# | NCE1205 |
| Type： | high-voltage N+P-channel IGBT MOS transistor |
| Manufactor | NCE |
| DC | NEW |
| Describe | DFN6 |
| Supplier Device Packaging | REEL |
| Technology | Trench |
| Polarity | N+P |
| BVDSS(V) | -12 |
| ID(A) | -5 |
| VTH(V) | -0.7 |
| RDS(ON)@4.5VTyp(mΩ) | 50 |
| QG(nC) | 9.2 |
| PD(W) | 1.9 |
| PKG | / |
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