| Part# | NCE8205i |
| Type： | high-voltage N+N-channel IGBT MOS transistor |
| Manufactor | NCE |
| DC | NEW |
| Describe | TSSOP8 |
| Supplier Device Packaging | REEL |
| Technology | Trench dual core |
| Polarity | N+N |
| BVDSS(V) | 20 |
| ID(A) | 5 |
| VTH(V) | 0.7 |
| RDS(ON)@4.5VTyp(mΩ) | 18 |
| QG(nC) | 9.5 |
| PD(W) | 1.25 |
| PKG | / |
