Product Overview
The BS62LV8001 is a high performance , very low power CMOS Static Random Access Memory organized as 1,048,576 words by 8 bits and operates from a wide range of 2.4V to 5.5V supply voltage.Advanced CMOS technology and circuit techniques provide both highspeed and low power features with a typical CMOS standby current of1.5uA at 3V/25oC and maximum access time of 55ns at 3.0V/85oC.Easy memory expansion is provided by an active LOW chip enable (CE1), an active HIGH chip enable (CE2) and active LOW output enable (OE) and three-state output drivers.
The BS62LV8001 has an automatic power down feature, reducing thepower consumption significantly when chip is deselected.
The BS62LV8001 is available in 48B BGA and 44L TSOP2 packages.
Product Features
? Wide Vcc operation voltage : 2.4V ~ 5.5V
? Very low power consumption :
Vcc = 3.0V
C-grade: 30mA (@55ns) operating current
I -grade: 31mA (@55ns) operating current
C-grade: 24mA (@70ns) operating current
I -grade: 25mA (@70ns) operating current
1.5uA (Typ.) CMOS standby current
Vcc = 5.0V
C-grade: 75mA (@55ns) operating current
I -grade: 76mA (@55ns) operating current
C-grade: 60mA (@70ns) operating current
I -grade: 61mA (@70ns) operating current
8.0uA (Typ.) CMOS standby current
? High speed access time :
-55 55ns
-70 70ns
? Automatic power down when chip is deselected
? Three state outputs and TTL compatible
? Fully static operation
? Data retention supply voltage as low as 1.5V
? Easy expansion with CE1, CE2 and OE options
Product Specifications
Part# | BS62LV8001EIP55 |
Type: | Integrated circuit |
Manufactor | BSI |
DC | Standard |
Describe | NEW |
Supplier Device Packaging | TSOP44 |
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