Product Features
? Advanced TrenchMOS provides low RDSon and low gate charge
? High efficiency gains in switching power converters
? Improved mechanical and thermal characteristics
? LFPAK provides maximum power density in a Power SO8 package
Product DESCRIPTION
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
Product Applications
? DC-to-DC converters
? Lithium-ion battery protection
? Load switching
? Motor control
? Server power supplies
Specifications
| Attribute | Attribute value |
| ANSM-Part# | ANSM-PSMN8R2-80YS |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| Single FETs, MOSFETs | |
| Mfr | Nexperia USA Inc. |
| Series | - |
| Package | Tape & Reel (TR) |
| Cut Tape (CT) | |
| Digi-Reel? | |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80 V |
| Current - Continuous Drain (Id) @ 25°C | 82A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3640 pF @ 40 V |
| FET Feature | - |
| Power Dissipation (Max) | 130W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Package / Case | SC-100, SOT-669 |
| Base Product Number | PSMN8R2 |
Actual product photos
Product Data Book：
For more product information, please download the PDF
Payment&Transportation
Official Certificate&Certificate
Multiple product supply
Company office environment
Warehouse Real Shot
Standard packaging
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