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Product Features

■ Exceptional dv/dt capability

■ Low gate charge

■ 100% Avalanche tested

This Power MOSFET series realized with STMicroelectronics unique STripFET? process has specifically been designed to minimize input

capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters

■ Switching application

Attribute	Attribute value
ANSM-Part#	ANSM-STP75NF20
Category	Discrete Semiconductor Products
	Transistors
	FETs, MOSFETs
	Single FETs, MOSFETs
Mfr	STMicroelectronics
Series	STripFET?
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	34mOhm @ 37A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs	84 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3260 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	190W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3
Base Product Number	STP75

STP75NF20

Product Data Book：

搜狗高速瀏覽器截圖20231226092720

搜狗高速瀏覽器截圖20231226092727

搜狗高速瀏覽器截圖20231226092732

For more product information, please download the PDF

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詳情頁(yè)3.1

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