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Product Benefits

? Low Gate-to-Drain Charge to Reduce Switching Losses

? Fully Characterized Capacitance Including Effective COSS to Simplify

Design, (See App. Note AN1001)

? Fully Characterized Avalanche Voltage and Current

? High frequency DC-DC converters

? Lead-Free

Attribute	Attribute value
ANSM-Part#	ANSM-IRFB260NPBF
Category	Discrete Semiconductor Products
	Transistors
	FETs, MOSFETs
	Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	HEXFET?
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	56A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	40mOhm @ 34A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs	220 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4220 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	380W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3
Base Product Number	IRFB260

IRFB260NPBF

Product Data Book：

搜狗高速瀏覽器截圖20231207180409

搜狗高速瀏覽器截圖20231207180421

搜狗高速瀏覽器截圖20231207180427

搜狗高速瀏覽器截圖20231207180440

搜狗高速瀏覽器截圖20231207180454

For more product information, please download the PDF

詳情8.1

詳情頁3.1

詳情5.1

詳情6.1

詳情9

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