Product Benefits
? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
? Fully Characterized Capacitance and Avalanche SOA
? Enhanced body diode dV/dt and dI/dt Capability
? Lead-Free
? RoHS Compliant, Halogen-Fre
Product Applications
? High Efficiency Synchronous Rectification in SMPS
? Uninterruptible Power Supply
? High Speed Power Switching
? Hard Switched and High Frequency Circuits
Specifications
| Attribute | Attribute value |
| ANSM-Part# | ANSM-IRFB3306PBF |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| Single FETs, MOSFETs | |
| Mfr | Infineon Technologies |
| Series | HEXFET? |
| Package | Tube |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 75A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 150μA |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4520 pF @ 50 V |
| FET Feature | - |
| Power Dissipation (Max) | 230W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Base Product Number | IRFB3306 |
Actual product photos
Product Data Book：
For more product information, please download the PDF
Payment&Transportation
Official Certificate&Certificate
Multiple product supply
Company office environment
Warehouse Real Shot
Standard packaging
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